Published on March 2019 | Optoelectronic device modelling

Modelling of electronic and optical properties of Cu2SnS3 quantum dots for optoelectronics applications
Authors: M Irshad Ahamed, K Sathish Kumar
View Author: Dr. M. Irshad Ahamed
Journal Name: Materials Science-Poland
Volume: 37 Issue: 1 Page No: 108-115
Indexing: SCI/SCIE,SCOPUS,Web of Science,DOAJ,SCIMAGOJR
Abstract:

Copper tin sulfide (Cu2SnS3) is a unique semiconductor, whose nanocrystals have attracted researchers’ attention for its tunable energy bandgap and wavelength in visible and near infrared range. Quantum dots which are fabricated from this material are highly suitable for optoelectronics and solar cell applications. This paper discusses the tunable energy bandgap, exciton Bohr radius and wavelength range of wurtzite structure of Cu2SnS3quantum dots to assess the opportunity to use them in optoelectronics applications. The considerations show that the mole fraction of copper increases as energy bandgap decreases and tunable energy bandgap of this quantum dot material is inversely proportional to the wavelength

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