Published on January 2013 | Strain MOS FET, Nanoelectronics, Quantum Mechanical Effect

A Physics Based Model Of Inversion Charge Sheet (ICS) For Nanoscale Biaxial Strained-Silicon NMOSFET Including Quantum Mechanical Effect (QME

In this paper, a physics based model of inversion charge sheet of nanoscale NMOSFETs has been presented. The model is formulated for nanoscale biaxial strained silicon NMOSFET including quantum mechanical effect (QME). The QME is splitting of conduction band due to very thin oxide (tox) and very large doping concentration of ultra small geometry of MOSFET. The QME shift the inversion charge sheet into subtracts. To overcome this problem strain technique is used because this shift is very small but this is effect causes increase in the surface potential as well as threshold voltage of nanoscale MOSFET. The modeling approach is to develop the model for inversion charge sheet after combining both QME and strain effect for biaxial strained silicon NMOSFET .The result shows a significant decrease in the inversion charge sheet of increasing the germanium mole fraction (%x) in silicon germanium heterostrusture virtual substrate. The presented result has been good agreement with published data. The result shows that QME is minimized by using strain technique in biaxial strained silicon NMOSFET. Presented result is valid for large range of doping concentration as well as mole fraction.