Published on February 2015 | Low Power Electronics, Tunnel FET, Nanoelectronics

Compact Analytical Model of Double Gate Junction-less Field Effect Transistor Comprising Quantum-Mechanical Effect

We investigate the quantum-mechanical effects on the electrical properties of the double-gate junctionless field effect transistors. The quantum-mechanical effect, or carrier energy-quantization effects on the threshold voltage, of DG-JLFET are analytically modeled and incorporated in the Duarte et al. model and then verified by TCAD simulation.