Published on May 2013 | Strain Technology, Nanoelectronics

https://1library.net/document/y9g46djq-review-ballistic-transport-heating-nanoscale-strained-silicon-mosfets

As MOS Transistors channel length continues to scale beyond 90nm, classical drift-diffusion model for carrier transport of such type of devices is not valid. For these dimensions of Transistors Quasi- Ballistic/ Ballistic transport phenomena occur and a new mobility model is required to predict electrical behavior of these devices perfectly. Selfheating is also one the importance critical problem for Nanoscale devices. In this article we re -examine the “Ballistic mobility” and “self-heating” for Nanoscale strained-silicon MOSFETs.