Published on November 2012 | Strain MOS FET, Nanoelectronics, Quantum Mechanical Effect

ANALYTICAL MODEL OF SURFACE POTENTIAL AND THRESHOLD VOLTAGE OF BIAXIAL STRAINED SILICON NMOSFET INCLUDING QME

In this paper physics based analytical model for threshold voltage of nanoscale biaxial strained nMOSFET has been presented. The maximum depletion depth and surface potential in biaxial strained–Si nMOSFET is determined, taking into account both the quantum mechanical effects (QME) and effects of strain in inversion charge sheet. The results show that a significant decrease in threshold voltage occurs with the increase in the germanium content in the silicon germanium layer. The results have been compared with the published data and the effect of variation of channel doping concentration has been examined.